Resistive random-access memory (ReRAM) is an emerging non-volatile memory technology that is gaining attention in the computing industry due to its numerous advantages over traditional memory technologies. ReRAM stores data by utilizing the resistance of a memristor, a two-terminal device whose resistance is influenced by the history of applied voltage. This unique feature allows ReRAM to store multiple bits of information in a single cell, resulting in higher storage density compared to conventional memory technologies.
One significant benefit of ReRAM is its low power consumption. Unlike volatile memory technologies such as DRAM, ReRAM doesn’t require constant refreshing, leading to reduced power requirements. As a result, ReRAM is particularly well-suited for power-constrained applications like mobile devices and wearable electronics.
In addition to its low power consumption, ReRAM exhibits faster access and read speeds compared to traditional DRAM. This characteristic makes it highly suitable for demanding applications like artificial intelligence and machine learning that require high performance.
The computing industry has taken notice of ReRAM’s potential, with major companies such as Intel, Samsung, and Micron making significant investments in its development. It is expected that ReRAM will eventually replace DRAM as the predominant memory technology in computers.